Publications

Journals

*equal contribution, †co-corresponding author

Full list of publications: Google Scholar

    1. Z. Huang, R.-Gyu Lee, E. Cuniberto, J. Song, J. Lee, A. Alharbi, K. Kisslinger, T. Taniguchi, K. Watanabe, Y.-Hoon Kim†, and D. Shahrjerdi†, “ Characterizing Defects Inside Hexagonal Boron Nitride Using Random Telegraph Signals in van der Waals 2D Transistors,” ACS nano, 18, (2024) Cover article.
    2. A. J. Wright*, H. Hassan Nasralla*, R. Deshmukh, M. Jamalzadeh, M. Hannigan, A. Patera, Y. Li , M. M.-Perez, N. Parashar, Z. Huang, T. Udumulla, W. Chen, D. De Forni, M. Weck, G. M. de Peppo, E. Riedo†, and D. Shahrjerdi†, “Nanoscale-localized multiplexed biological activation of field effect transistors for biosensing applications,” Nanoscale, 16, (2024) Cover article.
    3. M. Manzo-Perez*, M. Jamalzadeh*, Z. Huang, X. Tong, K. Kisslinger, D. Nykypanchuk, and D. Shahrjerdi, “Effects of residual oxygen on superconducting niobium films,” Appl. Phys. Lett., 125, (2024).
    4. R. Deshmukh*, A. J. Wright*, M. Jamalzadeh, H. Hassan Nasralla, E. Riedo†, and D. Shahrjerdi†, “Mitigation of electronic crosstalk interference in graphene transistor biosensors,” Journal of Vacuum Science & Technology B, 42, (2024) Cover article.
    5. D. Shakya, T. S. Rappaport, D. Shahrjerdi, M. E. Knox, S. Nie, A. Madanayake, Z. Popovic, and H. Wang. “Exploring Millimeter-Wave and Terahertz Circuits and Systems With a Novel Multiuser Measurement Facility: Multiuser Terahertz Measurement Facility (THz Lab),” IEEE Microwave Magazine, 25, (2024).
    6. Z. Huang, and D. Shahrjerdi, “Advances in Engineering Toolkits for Construction of Ultralow Disordered Van der Waals Heterostructures,” Advanced Functional Materials, 34, (2024).
    7. M. Jamalzadeh*, E. Cuniberto*, and D. Shahrjerdi, “A Framework for Benchmarking Emerging FSCV Neurochemical Sensors,” ,Advanced Physics Research, 3, (2024).
    8. M. Jamalzadeh*, E. Cuniberto*, Z. Huang, R. M. Feeley, J. C. Patel, M. E. Rice, J. Uichanco, and D. Shahrjerdi, “Toward robust quantification of dopamine and serotonin in mixtures using nano-graphitic carbon sensors,” Analyst, 149, (2024).
    9. Z. Huang, B.H. Elfeky, T. Taniguchi, K. Watanabe, J. Shabani, and D. Shahrjerdi, “Observation of half-integer Shapiro steps in graphene Josephson junctions,” Appl. Phys. Lett., 122, (2023) Cover article.
    10. E. Cuniberto, Z. Huang, M. D. Ward, and D. Shahrjerdi, “Unraveling the complex electrochemistry of serotonin using engineered graphitic sensors,” Analyst, 148, (2023).
    11. Z. Huang, N. Lotfizadeh, B. H. Elfeky, K. Kisslinger, E. Cuniberto, P. Yu, M. Hatefipour, T. Taniguchi, K. Watanabe, J. Shabani, and D. Shahrjerdi, “The study of contact properties in edge-contacted graphene–aluminum Josephson junctions,” Appl. Phys. Lett., 121, 243503 (2022).
    12. Z. Huang, E. Cuniberto, S. Park, K. Kisslinger, Q. Wu, T. Taniguchi, K. Watanabe, K. G. Yager, D. Shahrjerdi, “Mechanisms of interface cleaning in heterostructures made from polymer‐contaminated graphene,” Small, 18, 2201248 (2022).
    13. Z. Cheng, C-S. Pang, P. Wang, S. T. Le, Y. Wu, D. Shahrjerdi, I. Radu, M. C. Lemme, L-M. Peng, X. Duan, Z. Chen, J. Appenzeller, S. J. Koester, E. Pop, A. D. Franklin, C. A. Richter, “How to report and benchmark emerging field-effect transistors,” Nature Electronics, 5, 416-423 (2022).
    14. X. Liu*, Z. Huang*, X. Zheng, D. Shahrjerdi†, E. Riedo†, “Nanofabrication of graphene field-effect transistors by thermal scanning probe lithography,” APL Materials, 9, 011107 (2021).
    15. E. Cuniberto, A. Alharbi, Z. Huang, T. Wu, R. Kiani, D. Shahrjerdi, “Anomalous sensitivity enhancement of nano-graphitic electrochemical micro-sensors with reducing the operating voltage,” Biosensors and Bioelectronics, 177, 112966 (2021).
    16. Z. Huang*, A. Alharbi*, W. Mayer, E. Cuniberto, T. Taniguchi, K. Watanabe, J. Shabani, D. Shahrjerdi, “Versatile construction of van der Waals heterostructures using a dual-function polymeric film,” Nature Communications, 11, 3029 (2020).
    17. E. Cuniberto*, A. Alharbi*, T. Wu, Z. Huang, K. Sardashti, K-D. You, K. Kisslinger, T. Taniguchi, K. Watanabe, R. Kiani, D. Shahrjerdi, “Nano-engineering the material structure of preferentially oriented nano-graphitic carbon for making high-performance electrochemical micro-sensors,” Scientific Reports, 10, 9444 (2020).
    18. X. Zheng, A. Calò, T. Cao, X. Liu, Z. Huang, P. M. Das, M. Drndic, E. Albisetti, F. Lavini, V. Narang, W. P. King, J. W. Harrold, M. Vittadello, C. Aruta, D. Shahrjerdi†, E. Riedo†, “Spatial defects nanoengineering for bipolar conductivity in MoS2,” Nature Communications, 11, 3463 (2020).
    19. K-D. You, E. Cuniberto, S-C. Hsu, B. Wu, Z. Huang, X. Pei, D. Shahrjerdi, “An Electrochemical Biochip for Measuring Low Concentrations of Analytes with Adjustable Temporal Resolutions,” IEEE Transactions on Biomedical Circuits and Systems, 14, pp. 903-917 (2020).
    20. A. Manickam, K-D. You, N. Wood, L. Pei, Y. Liu, R. Singh, N. Gamini, M. W. McDermott, D. Shahrjerdi, R. G. Kuimelis, A. Hassibi, “A CMOS Electrochemical Biochip With 32×32 Three-Electrode Voltammetry Pixels,” IEEE Journal of Solid-State Circuits, 54, pp. 2980-2990 (2019).
    21. R. Li, X. Zhang, L. Miao, L. Stewart, E. Kotta, D. Qian, K. Kaznatcheev, J. T Sadowski, E. Vescovo, A. Alharbi, T. Wu, T. Taniguchi, K. Watanabe, D. Shahrjerdi, L. A. Wray, “Second derivative analysis and alternative data filters for multi-dimensional spectroscopies- A Fourier-space perspective,” Journal of Electron Spectroscopy and Related Phenomena, 238, 146852 (2019).
    22. X. Zheng, A. Calo, E. Albisetti, X. Liu, A. Alharbi, G. Arefe, X. Liu, M. Spieser, W. Yoo, T. Taniguchi, K. Watanabe, C. Aruta, B. S. Lee, M. Lipson, J. Hone, D. Shahrjerdi, E. Riedo, “Patterning metal contacts on monolayer MoS2 with vanishing Schottky barriers using thermal nanolithography,” Nature Electronics, 2, pp. 17–25 (2019).
    23. T. Wu*, A. Alharbi*, R. Kiani, D. Shahrjerdi, “Quantitative Principles for Precise Engineering of Sensitivity in Graphene Electrochemical Sensors,” Advanced Materials, 31, 1805752 (2019) Cover Article.
    24. A. Alharbi, Z. Huang, T. Taniguchi, K. Watanabe D. Shahrjerdi, “Effect of Substrate Coupling on the Performance and Variability of Monolayer MoS2 Transistors,” IEEE Electron Device Lett., 40, pp. 135-138 (2019) Editors’ Pick.
    25. T. Wu, A. Alharbi, T. Taniguchi, K. Watanabe, D. Shahrjerdi, “Low-frequency noise in irradiated graphene FETs,” Appl. Phys. Lett., 113, 193502 (2018) Editor’s Pick.
    26. A. Alharbi, D. Shahrjerdi, “Analyzing the Effect of High-k DielectricMediated Doping on Contact Resistance in Top-Gated Monolayer MoS2 Transistors,” IEEE Transactions on Electron Devices, 65, pp. 4048-4092 (2018) Invited contribution to the special issue on 2D Materials.
    27. B. Nasri, T. Wu, A. Alharbi, K-D. You, M. Gupta, S. P Sebastian, R. Kiani, D. Shahrjerdi, “Hybrid CMOS-Graphene Sensor Array for Subsecond Dopamine Detection,” IEEE Transactions on Biomedical Circuits and Systems, 11, pp. 1192-1203 (2017) Invited contribution to the special issue on ISSCC.
    28. A. Alharbi, D. Armstrong, S. Alharbi, D. Shahrjerdi, “Physically Unclonable Cryptographic Primitives by Chemical Vapor Deposition of Layered MoS2,” ACS Nano, 11, pp. 12772-12779 (2017) Research highlight in Nature Nanotechnology.
    29. Y. Cao, A. J. Robson, A. Alharbi, J. Roberts, C. S. Woodhead, Y. J. Noori, R. Bernardo-Gavito, D. Shahrjerdi, U. Roedig, V. I Fal’ko, R. J. Young, “Optical identification using imperfections in 2D materials,” 2D Materials, 4, 045021 (2017).
    30. T. Wu, A. Alharbi, K-D. You, K. Kisslinger, E. A. Stach, D. Shahrjerdi, “Experimental Study of the Detection Limit in Dual-Gate Biosensors Using Ultrathin Silicon Transistors,” ACS Nano, 11, pp. 7142-7147 (2017).
    31. C-C. Hsieh, Y. F. Chang, Y. Jeon, A. Roy, D. Shahrjerdi, S. K. Banerjee, “Short-Term Relaxation in HfOx/CeOx Resistive Random Access Memory With Selector,” IEEE Electron Device Lett., 38, pp. 871-874 (2017).
    32. A. Alharbi, P. Zahl, D. Shahrjerdi, “Material and device properties of superacidtreated monolayer molybdenum disulfide,” Appl. Phys. Lett., 110, 033503 (2017) Research highlight by Department of Energy.
    33. C-C. Hsieh, Y-F. Chang, Y-C. Chen, D. Shahrjerdi, S. K Banerjee, “Highly Non-linear and Reliable Amorphous Silicon Based Back-to-Back Schottky Diode as Selector Device for Large Scale RRAM Arrays,” ECS Journal of Solid State Science and Technology, 6, pp. 143-147 (2017).
    34. A. Alharbi, D. Shahrjerdi, “Electronic properties of monolayer tungsten disulfide grown by chemical vapor deposition,” Appl. Phys. Lett., 109, 193502 (2016) Featured on: NSF News webpage, DOE news webpage, IEEE Spectrum.
    35. C-C. Hsieh, A. Roy, Y. Chang, A. Bhatti, D. Shahrjerdi, S. Banerjee, “A sub-1-volt analog metal oxide memristivebased synaptic device with large conductance change for energy-efficient spike-based computing systems,” Appl. Phys. Lett., 109, 223501 (2016) Editor’s Pick.
    36. A. Alharbi, D. Shahrjerdi, “Energy band engineering of flexible gallium arsenide through substrate cracking with pre-tensioned films,” Physica Status Solidi RRL, 10, pp. 627-631 (2016).
    37. D. Shahrjerdi, S. W. Bedell, A. Khakifirooz, K. Cheng, “Mechanically flexible nanoscale silicon integrated circuits powered by photovoltaic energy harvesters,” Solid-State Electronics, 117, pp. 117-122 (2016).

    Research at IBM T. J. Watson

    1. D. Shahrjerdi, A. D. Franklin, S. Oida, J. A. Ott, G. Tulevski, W. Haensch, “High-Performance Air-Stable n-Type Carbon Nanotube Transistors with Erbium Contacts,” ACS Nano, 7, pp. 8303–8308 (2013).
    2. D. Shahrjerdi, S. W. Bedell, “Extremely bendable nanoscale ultra-thin body silicon integrated circuit on plastic,” Nano Lett., 13, pp. 315–320 (2013).
    3. D. Shahrjerdi, S. W. Bedell, C. Bayram, K. Fogel, C. C. Lubguban, P. Lauro, J. A. Ott, M. Hopstaken, M. Gaynes, D. K. Sadana, “Ultra-light high-efficiency flexible tandem InGaP:(In)GaAs solar cells,” Advanced Energy Materials, 3, pp. 566-571 (2013) Cover Article.
    4. M. E. Ramon, T. Akyol, D. Shahrjerdi, C. D. Young, J. Cheng, L. F. Register, S. K. Banerjee, “Fast and slow transient charging in various III-V field-effect transistors with atomic-layer-deposited-Al2O3 gate dielectric,” Appl. Phys. Lett., 102, 022104 (2013).
    5. B. Hekmatshoar, D. Shahrjerdi, M. Hopstaken, K. Fogel, D. K. Sadana, “High-efficiency heterojunction solar cells on crystalline germanium substrates,” Appl. Phys. Lett., 101, 032102 (2012).
    6. B. Hekmatshoar, D. Shahrjerdi, M. Hopstaken, J. A. Ott, D. K. Sadana, “Characterization of Thin Epitaxial Emitters for High-Efficiency Silicon Heterojunction Solar Cells,” Appl. Phys. Lett., 101, 103906 (2012).
    7. D. Shahrjerdi, S. W. Bedell, C. Ebert, C. Bayram, B. Hekmatshoar, K. Fogel, P. Laura, M. Gaynes, T. Gokmen, J. Ott, D. K. Sadana, “High-efficiency thin-film InGaP:InGaAs:Ge tandem solar cells enabled by controlled spalling technology,” Appl. Phys. Lett., 100, 053911 (2012).
    8. A. D. Franklin, G. S. Tulevski, S-J. Han, D. Shahrjerdi, Q. Cao, H-Y. Chen, H-S. P. Wong, W. Haensch “Variability in carbon nanotube transistors—Improving gate control,” ACS Nano, 6, 1109 (2012).
    9. D. Shahrjerdi, B. Hekmatshoar, S. W. Bedell, D. K. Sadana, “Low-temperature epitaxy of compressively strained silicon directly on silicon substrates,” J. Electronic Materials, 41, 494 (2012). Best paper award.
    10. S. W. Bedell, D. Shahrjerdi, B. Hekmatshoar, K. Fogel, P. Lauro, N. Sosa, D. K. Sadana, “Kerf-Less removal of Si, Ge and III-V layers by controlled spalling,” IEEE J. of Photovoltaics, 2, 141 (2012).
    11. D. Shahrjerdi, B. Hekmatshoar, D. K. Sadana, “Low-temperature a-Si:H/GaAs heterojunction solar cells,” IEEE J. Photovoltaics, vol. 1, 104 (2011).

    Research at UT Austin

    1. D. Shahrjerdi, J. Nah, T. Akyol, E. Tutuc, and S. K. Banerjee, “Hall mobility measurements in enhancement-mode GaAs field-effect transistors with Al2O3 gate dielectric,” Appl. Phys. Lett., 97, 213506 (2010).
    2. J. Nah, E. –S. Liu, K. M. Varahramyan, D. Shahrjerdi, S. K. Banerjee, and E. Tutuc, “Scaling properties of Ge-SixGe1-x core-shell nanowire field-effect transistors,” IEEE Trans. Electron Device, 57, 491 (2010).
    3. D. I. Garcia-Gutierrez, D. Shahrjerdi, V. Kaushik, S. K. Banerjee, “Physical and electrical characterizations of metal-oxide-semiconductor capacitors fabricated on GaAs substrates with different surface chemical treatments and Al2O3 gate dielectric,” J. Vacuum Sci. Tech. B: Microelectronics and Nanometer Structures, 27, p. 2390 (2009).
    4. J. Nah, E. –S. Liu, D. Shahrjerdi, K. M. Varahramyan, S. K. Banerjee, E. Tutuc, “Realization of dual-gated Ge-SixGe1-x core-shell nanowire field-effect transistors with highly doped source and drain,” Appl. Phys. Lett., 94, 063117 (2009).
    5. S. Kim, J. Nah, I. Jo, D. Shahrjerdi, L. Colombo, Z. Yao, E. Tutuc, S. K. Banerjee, “Realization of high-mobility dual-gated graphene field-effect transistors with Al2O3 gate dielectrics,” Appl. Phys. Lett., 94, 062107 (2009).
    6. F. Ferdousi, J. Sarkar, S. Tang, D. Shahrjerdi, T. Akyol, E. Tutuc, S. K. Banerjee, “Protein-assembled nanocrystal-based vertical flash memory devices with Al2O3 integration,” J. Electronic Materials, 38, pp. 438-442 (2009).
    7. D. Shahrjerdi, N. Nuntawong, G. Balakrishnan, D. I. Garcia-Gutierrez, A. Khoshakhlagh, E. Tutuc, D. Huffaker, J. C. Lee, S. K. Banerjee, “Fabrication and characterization of metal-oxide-semiconductor GaAs capacitors on Ge/Si1-xGex/Si substrates with Al2O3 gate dielectric,” J. Vacuum Science Technology B, 26, pp. 1182-1186 (2008).
    8. D. Shahrjerdi, T. Rotter, G. Balakrishnan, D. Huffaker, E. Tutuc, S. K. Banerjee, “Fabrication of self-aligned enhancement-mode In0.53Ga0.47As MOSFETs with TaN/HfO2/AlN gate stack,” IEEE Electron Device Lett., 29, pp. 557-560 (2008).
    9. D. Shahrjerdi, D. I. Garcia-Gutierrez, E. Tutuc, S. K. Banerjee, “Chemical and physical interface studies of the atomic-layer-deposited Al2O3 on GaAs,” Appl. Phys. Lett., 92, 223501 (2008).
    10. H. Zhao, D. Shahrjerdi, F. Zhu, H-S. Kim, I. OK, M. Zhang, J. H. Yum, S. K. Banerjee, J. C. Lee, “Inversion-type InP MOSFETs with EOT of 21Å using atomic layer deposited Al2O3 gate dielectric,” Electrochem. Solid-State Lett., 11, 233 (2008).
    11. D. Shahrjerdi, T. Akyol, M. Ramon, D. I. Garcia-Gutierrez, E. Tutuc, S. K. Banerjee, “Self-aligned inversion-type enhancement-mode GaAs metal-oxide-semiconductor field-effect transistors with Al2O3 gate dielectric,” Appl. Phys. Lett., 92, 203505 (2008).
    12. H. Zhao, D. Shahrjerdi, F. Zhu, H-S. Kim, I. OK, M. Zhang, J. H. Yum, S. K. Banerjee, J. C. Lee, “Inversion-type indium phosphide metal-oxide-semiconductor field-effect transistors with equivalent oxide thickness of 12Å using stacked HfAlOx/HfO2 gate dielectric,” Appl. Phys. Lett., 92, 253506 (2008).
    13. H. Zhao, D. Shahrjerdi, F. Zhu, M. Zhang, H-S. Kim, I. OK, J. H. Yum, S. Park, S. K. Banerjee, J. C. Lee, “Gate-first inversion-type InP metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al2O3 gate dielectric,” Appl. Phys. Lett., 92, 233508 (2008).
    14. H. Liu, W. Winkenwerder, Y. Liu, D. Ferrer, D. Shahrjerdi, S. K. Stanley, J. G. Ekerdt, S. K. Banerjee, “Core-shell Ge-Si nanocrystal floating gate for nonvolatile memory applications,” IEEE Trans. on Electron Devices, 55, pp. 3610-3614 (2008).
    15. D. Shahrjerdi, D. I. Garcia-Gutierrez, T. Akyol, S. R. Bank, E. Tutuc, J. C. Lee, S. K. Banerjee, “GaAs metal-oxide-semiconductor capacitors using atomic layer deposition of HfO2 gate dielectric: Fabrication and characterization,” Appl. Phys. Lett., 91, 193503 (2007).
    16. D. Shahrjerdi, E. Tutuc, S. K. Banerjee, “Impact of surface chemical treatment on capacitance-voltage characteristics of GaAs metal-oxide-semiconductor capacitors with Al2O3 gate dielectric,” Appl. Phys. Lett., 91, 063501 (2007).
    17. J. Donnely and D. Shahrjerdi, E. Tutuc, S. K. Banerjee, “Enhanced channel mobility materials for MOSFETs on Si substrates,” ECS Trans., 11, pp. 47-60 (2007).
    18. M. M. Oye, D. Shahrjerdi, I. OK, J. B. Hurst, S. D. Lewis, S. Dey, D. Q. Kelly, S. Joshi, T. J. Mattord, X. Yu, M. A. Wistey, J. S. Harris, A. L. Holmes, J. C. Lee, S. K. Banerjee, “Molecular-beam epitaxy growth of device-compatible GaAs on silicon substrates with thin (80nm) Si1-xGex step-graded buffer layers for high-k III-V metal-oxide-semiconductor field-effect transistor applications,” J. Vacuum Science Technology B, 25, p. 1098 (2007).
    19. D. Shahrjerdi, D. I. Garcia-Gutierrez, S. K. Banerjee, “Fabrication of Ni nanocrystal flash memories using a polymeric self-assembly approach,” IEEE Electron Device Lett., 28, pp. 793-796 (2007).
    20. J. Sarkar, S. Tang, D. Shahrjerdi, S. K. Banerjee, “Vertical flash memory with protein-mediated assembly of nanocrystal floating gate,” Appl. Phys. Lett., 90, 103512 (2007).
    21. S. S. Coffee, D. Shahrjerdi, S. K. Banerjee, J. G. Ekerdt, “Selective silicon nanoparticle growth on high-density arrays of silicon nitride,” J. Crystal Growth, 308, pp. 269-277 (2007).
    22. J. Sarkar, S. Dey, D. Shahrjerdi, S. K. Banerjee, “Vertical Flash Memory Cell with Nanocrystal Floating Gate for Ultradense Integration and Good Retention,” IEEE Electron Device Lett., 28, pp. 449-451 (2007).
    23. D. Shahrjerdi, M. M. Oye, A.L. Holmes Jr., S.K. Banerjee, “Unpinned metal gate/high-k GaAs capacitors, fabrication and characterization,” Appl. Phys. Lett., 89, 340501 (2006).

    Research at Univerity of Tehran

    1. B. Hekmatshoar, S. Mohajerzadeh, D. Shahrjerdi, A. Afzali-Kusha, M.D. Robertson, A. Tonita, “Low-temperature copper-induced lateral growth of polycrystalline germanium assisted by external compressive stress,” J. of Appl. Phys., 97, 044901 (2005).
    2. D. Shahrjerdi, B. Hekmatshoar, A. Afzali-Kusha, A. Khakifirooz, “Optimization of the VT control method for low-power ultra-thin double-gate SOI logic circuitsOptimization of the VT control method for low-power ultra-thin double-gate SOI logic circuits,” Integration, the VLSI Journal, 38, pp.505-513 (2005).
    3. B. Hekmatshoar, S. Mohajerzadeh, D. Shahrjerdi, M. Robertson, “Thin-film tunneling transistors on flexible plastic substrates based on stress-assisted lateral growth of poly-germanium,” Appl. Phys. Lett., 85, pp. 1054-1057 (2004).
    4. D. Shahrjerdi, M. Fathipour, B. Hekmatshoar, A. Khakifirooz, “A lateral structure for low-cost fabrication of COOLMOS,” Solid-State Electronics, 48, pp. 1953-1957 (2004).
    5. B. Hekmatshoar, D. Shahrjerdi, S. Mohajerzadeh, A. Khakifirooz, M. Robertson, A. Tonita, J.C. Bennett, “Low temperature stress-assisted metal-induced crystallization of silicon-germanium alloys on flexible PET substrates,” J. of Vacuum Science and Technology A, 22, pp. 856-858 (2004).
    6. B. Sadeghi, M. Moradi, A. Moafi, S. Mohajerzadeh, B. Hekmatshoar, D. Shahrjerdi, “Fabrication of Poly-Ge-Based Thermopiles on Plastic,” IEEE Sensors Journal, 4, pp. 743-748 (2004).
    7. B. Hekmatshoar, D. Shahrjerdi, S. Mohajerzadeh, A. Khakifirooz, A. Goodarzi, M. Robertson, “Low-temperature crystallization of amorphous germanium on plastic, by means of externally applied compressive stress,” J. of Vacuum Science and Technology A, 21, pp. 752-755 (2003).
    8. D. Shahrjerdi, B. Hekmatshoar, S. Mohajerzadeh, L. Rezaee, “Low-temperature stress-induced crystallization of germanium on plastic,” Thin Solid Films, 427, pp. 330-334 (2003).